|
Part Number
|
LET9006 |
|
Manufacturer
|
STMicroelectronics |
|
Title
|
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
|
Description
|
The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band comm...
|
|
Features
|
ate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 5 °C/W
April, 15 2003
1/4
LET9006
ELECTRICAL SPE...
|
|
File Size
|
40.56KB |
|
Datasheet
|
LET9006 PDF File
|