Transistor. LMBT2907DW1T1G Datasheet

LMBT2907DW1T1G Datasheet PDF

Part LMBT2907DW1T1G
Description Dual Transistor
Feature LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor Featrues z We declare that the materia.
Manufacture Leshan Radio Company
Datasheet
Download LMBT2907DW1T1G Datasheet

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT2907DW1T1G Datasheet




LMBT2907DW1T1G
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistor
Featrues
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Value
Symbol 2907 2907A Unit
Collector–Emitter Voltage
V CEO
–40 –60 Vdc
Collector–Base Voltage
V CBO
–60 Vdc
Emitter–Base Voltage
V EBO
–5.0 Vdc
Collector Current — Continuous I C
–600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
LMBT2907DW1T1G
LMBT2907ADW1T1G
S-LMBT2907DW1T1G
S-LMBT2907ADW1T1G
65 4
1
2
3
SC-88
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
ORDERING INFORMATION
Device
Packing
LMBT2907ADW1T1G
S-LMBT2907ADW1T1G
SC88
LMBT2907ADW1T 3G
S-LMBT2907ADW1T1G
SC88
Shipping
3000 Units/Reel
10000 Units/Reel
(S-)LMBT2907DW1T1G = M2B, (S-)LMBT2907ADW1T1G = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –10 mAdc, I B = 0)
LMBT2907
LMBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
LMBT2907
LMBT2907A
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CEX
I CBO
–40
–60
–60
–5.0
–50
–0.020
–0.010
Vdc
Vdc
Vdc
nAdc
µAdc
( V CB = –50Vdc, I E = 0, T A =125°C )
LMBT2907
LMBT2907A
Base Current( V CE = –30Vdc, V =EB(off) –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
— –20
— –10
I B — –50 nAdc
Rev.A 1/6



LMBT2907DW1T1G
LESHAN RADIO COMPANY, LTD.
LMBT2907DW1T1G, LMBT2907ADW1T1G
S-LMBT2907DW1T1G, S-LMBT2907ADW1T1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = –0.1mAdc, V CE = –10 Vdc)
LMBT2907
LMBT2907A
hFE
(I C =–1.0mAdc, V CE = –10 Vdc)
LMBT2907
LMBT2907A
(I C = –10 mAdc, V CE = –10Vdc)
LMBT2907
LMBT2907A
(I C = –150mAdc, V CE =–10 Vdc)(3)
LMBT2907
LMBT2907A
(I C = –500mAdc, V CE =–10 Vdc)(3)
LMBT2907
LMBT2907A
Collector–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
Base–Emitter Saturation Voltage(3)
(I C = –150mAdc, I B = –15 mAdc)
(I C = –500mAdc, I B = –50 mAdc)
VCE(sat)
V BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –50mAdc, V CE= –20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
f
T
C
obo
C
ibo
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
Rise Time
Fall Time
Storage Time
Turn–Off Time
(V CC = –30 Vdc,
I C = –150 mAdc, I B1 = –15 mAdc)
(V CC = –6.0 Vdc,
I C = –150 mAdc,I B1 = I B2 = 15 mAdc)
t on
td
tr
tf
ts
t off
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
Min
35
75
50
100
75
100
––
100
30
50
––
––
––
––
200
––
––
Max
––
––
––
––
––
––
––
300
––
––
–0.4
–1.6
–1.3
–2.6
––
8.0
30
45
10
40
60
225
280
Unit
––
Vdc
Vdc
MHz
pF
pF
ns
ns
INPUT
Z o = 50
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. <200 ns
0
–16 V
–30 V
200
1.0 k
50
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Z O= 50
PRF = 150 PPS
RISE TIME <2.0 ns
P.W. < 200 ns
0
+15 V
1.0 k
1.0 k
–30 V
50 1N916
–6.0 V
37
TO OSCILLOSCOPE
RISE TIME < 5.0 ns
200 ns
Figure 2. Storage and Fall Time Test Circuit
Rev.A 2/6




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