N-Channel Enhancement Mode Field Effect Transistor
Description
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 20V
Product Summary ID
3.6A
RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V
LN2300
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L/B package
■ Package
SOT-23-3L/B
3
D
D
■ Ordering Information
GS
12
SOT-2...
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