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LN55

Panasonic Semiconductor
Part Number LN55
Manufacturer Panasonic Semiconductor
Title GaAs Infrared Light Emitting Diode
Description Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-ef...
Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 ...

Published Mar 22, 2005
Datasheet PDF File LN55 PDF File


LN55
LN55


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