Part Number | LNA2802L |
Manufacturer | Panasonic Semiconductor |
Title | GaAs Infrared Light Emitting Diode |
Description | Infrared Light Emitting Diodes LNA2802L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 For opti... |
Features |
High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package
(1.5)
ø3.8±0.2 ø3.0±0.2
1.0
2.54
Parameter Power... |
Published | Mar 22, 2005 |
Datasheet | LNA2802L PDF File |