Part Number | LPD200MX |
Manufacturer | Filtronic Compound Semiconductors |
Title | HIGH PERFORMANCE PHEMT |
Description | AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transis... |
Features |
♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency
LPD200MX
• DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenid... |
Published | Mar 22, 2005 |
Datasheet | LPD200MX PDF File |