Barrier Rectifier. MBR16200CT Datasheet

MBR16200CT Datasheet PDF


Part Number

MBR16200CT

Description

Schottky Barrier Rectifier

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download MBR16200CT Datasheet



MBR16200CT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16200CT
FEATURES
·Low power loss ,high efficiency
·Low Forward Voltage
·High surge capacity
·Pb-Free Packages are Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for in low voltage,high frequency invertersfree
wheeling,and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
200
140
16
150
V
V
A
A
TJ Junction Temperature
-55~150
Tstg Storage Temperature Range
-65~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

MBR16200CT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16200CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VF Maximum Instantaneous Forward Voltage IF= 8A ; TC= 25
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 25
Rated DC Voltage, TC= 125
MAX
UNIT
0.9 V
0.05
20
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




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