Rectifier. MBR20100CT Datasheet


MBR20100CT Datasheet PDF


MBR20100CT


Dual High Voltage Schottky Rectifier
MBR20100CT — Dual High Voltage Schottky Rectifier

October 2010

MBR20100CT Dual High Voltage Schottky Rectifier
Features
• • • • • • Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Rohs Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C

+
PIN1 PIN3

_
PIN2

TO-220
1 Mark : MBR20100CT

Absolute Maximum Ratings*
Symbol
VRRM VR IF(AV) IFSM TSTG

Ta = 25°C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current, Tc= 120°C Peak Forward Surge Current, 8.3mS Half Sine wave Storage Temperature Range

Value
100 100 10 (Per Leg) 20 (Per Device) 150 -55 to 150

Unit
V V A A °C

Operating Junction Temperature 150 °C TJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ta = 25°C unless otherwise noted

Thermal Characteristics*
Symbol
RθJC RθJA * JESD51-10

Parameter
Thermal Resistance, Junction to Case per Leg Thermal Resistance, Junction to Ambient per Leg

Max.
1.5 62.5

Unit
°C/W °C/W

Electrical Characteristics*
Symbol
IR

Ta = 25°C unless otherwise noted

Parameter
Reverse Current

Test Condition
VR = 100V VR = 100V IF = 10A IF = 10A IF = 20A IF = 20A Tc = 25 °C Tc = 125 °C Tc = 25 °C Tc = 125 °C Tc = 25 °C Tc = 125 °C

Min.

Max.
0.2 5 0.8 0.7 0.9 0.8

Unit
m...



MBR20100CT
MBR20100CT
Dual High Voltage Schottky Rectifier
October 2010
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Rohs Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
TO-220
1
Mark : MBR20100CT
+
PIN1
PIN3
_
PIN2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VRRM
VR
IF(AV)
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, Tc= 120°C
100
100
10 (Per Leg)
20 (Per Device)
V
V
A
IFSM
Peak Forward Surge Current, 8.3mS Half Sine wave
150
A
TSTG
Storage Temperature Range
-55 to 150
°C
TJ Operating Junction Temperature
150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta = 25°C unless otherwise noted
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case per Leg
Thermal Resistance, Junction to Ambient per Leg
* JESD51-10
Max.
1.5
62.5
Unit
°C/W
°C/W
Electrical Characteristics* Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
IR Reverse Current
VF Forward Voltage
VR= 100V
VR= 100V
IF= 10A
IF= 10A
IF= 20A
IF= 20A
Tc = 25 °C
Tc = 125 °C
Tc = 25 °C
Tc = 125 °C
Tc = 25 °C
Tc = 125 °C
* DC Item are tested by Pulse Test : Pulse Width300μs, Duty Cycle2%
Min.
Max.
0.2
5
0.8
0.7
0.9
0.8
Unit
mA
V
© 2010 Fairchild Semiconductor Corporation
MBR20100CT Rev. A0
1
www.fairchildsemi.com

MBR20100CT
Typical Performance Characteristics
Figure 1. Forward Current Characteristics
10
T =125 oC
J
1
T =75 oC
J
T =25 oC
J
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage Drop, V [V]
F
Figure 3.Junction Capacitance
2
1
0.9
0.8
f=1mhz
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 2 4 6 8 10
Reverse Voltage, V [V]
R
Figure 2. Reverse Leakage Current
1000
100
10
1
0.1
0.01
20
T =125 oC
J
T =75 oC
J
T =25 oC
J
40 60
Reverse Voltage, V [V]
R
80
100
Figure 4. Power Derating
30
25
DC
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature, T [oC]
C
© 2010 Fairchild Semiconductor Corporation
MBR20100CT Rev. A0
2
www.fairchildsemi.com

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