Rectifier. MBR30H100CT Datasheet

MBR30H100CT Datasheet PDF

Part MBR30H100CT
Description SWITCHMODE Power Rectifier
Feature www.DataSheet4U.com MBR30H100CT SWITCHMODE™ Power Rectifier 100 V, 30 A Features and Benefits • • .
Manufacture ON Semiconductor
Datasheet
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MBR30H100CT
MBR30H100CT,
MBRF30H100CT
Switch‐mode
Power Rectifier
100 V, 30 A
Features and Benefits
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
These are Pb−Free Devices
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
100 VOLTS
1
2, 4
3
MARKING
DIAGRAMS
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B30H100G
AKA
ISOLATED TO−220
CASE 221D
STYLE 3
AYWW
B30H100G
AKA
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
B30H100 = Device Code
G = Pb−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
MBR30H100CT/D



MBR30H100CT
MBR30H100CT, MBRF30H100CT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 156°C)
Per Diode
Per Device
Symbol
VRRM
VRWM
VR
IF(AV)
Value
100
15
30
Unit
V
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFM 30 A
IFSM 250 A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
TJ
Tstg
dv/dt
+175
*65 to +175
10,000
°C
°C
V/ms
Controlled Avalanche Energy (see test conditions in Figures 13 and 14)
WAVAL 200 mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR30H100CT) − Junction-to-Case
− Junction-to-Ambient
(MBRF30H100CT) − Junction-to-Case
− Junction-to-Ambient
Symbol
RqJC
RqJA
RqJC
RqJA
Value
2.0
60
4.2
75
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 15 A, TJ = 25°C)
(iF = 15 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
vF V
− 0.76 0.80
− 0.64 0.67
− 0.88 0.93
− 0.76 0.80
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR mA
− 1.1 6.0
0.0008
0.0045
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Order Number
MBR30H100CTG
MBRF30H100CTG
Package Type
TO−220
(Pb−Free)
TO−220FP
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
http://onsemi.com
2




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