INS829, INS830 INS831
MBRS831,H, HI
® MOTOROLA
De!o'>igneJ'!o'> Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the Schottky Barrier principle in a large area metalto-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, h...