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MBR60100R Diode Datasheet PDFSilicon Power Schottky Diode Silicon Power Schottky Diode |
　
　
　
| Part Number | MBR60100R |
|---|---|
| Description | Silicon Power Schottky Diode |
| Feature | Silicon Power Schottky Diode
Features †¢ High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitiv e Note: 1. Standard polarity: Stud is c athode. 2. Reverse polarity (R): Stud i s anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified (" R" devices have leads reversed) Parame ter Symbol Conditions MBR6045 (R) MB R6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS r everse voltage DC blocking voltage Cont inuous forward current Surge non-repeti tive forward current, . |
| Manufacture | GeneSiC |
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| Part Number | MBR60100R |
|---|---|
| Description | (MBR6020 - MBR60100) SCHOTTKY DIODES |
| Feature | Transys
Electronics
L I M I T E D
MBR60 20(R) THRU MBR60100(R)
SCHOTTKY DIODES STUD TYPE
60 A
60Amp Rectifier 20-100 Volts
Features
High Surge Capability Types up to100V V RRM
DO-5
www. DataShe et4U. com Maximum Ratings Operating Tem perature: -65 C to +150 N B Storage T emperature: -65 C to +175 M C J Part Number MBR6020(R) MBR6030(R) MBR6035(R ) MBR6040(R) MBR6045(R) MBR6060(R) MBR6 080(R) MBR60100(R) Maximum Recurrent P eak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum RMS Voltage 14V 21V 25V 28V 32V 42V 50V 70V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 6 0V 80V 100V K . |
| Manufacture | TRANSYS Electronics |
| Datasheet |
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| Part Number | MBR60100R |
|---|---|
| Description | (MBR6045 - MBR60100R) Schottky Power Diode |
| Feature | Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage dro p High surge capability High efficiency , low power loss Normal and Reverse pol arity MBR6045 thru MBR60100R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, un less otherwise noted) Parameter Test Co nditions Symbol MBR6045(R) MBR6060(R) M BR6080(R) MBR60100(R) Unit Repetitive peak reverse voltage RMS reverse voltag e DC blocking voltage Continuous forwar d current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 25oC VR = 20V, TJ = 25oC V . |
| Manufacture | Naina Semiconductor |
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