Rectifier Module. MDD95-12N1B Datasheet

MDD95-12N1B Datasheet PDF


Part Number

MDD95-12N1B

Description

Standard Rectifier Module

Manufacture

IXYS

Total Page 6 Pages
Datasheet
Download MDD95-12N1B Datasheet



MDD95-12N1B
Standard Rectifier Module
Phase leg
Part number
MDD95-12N1B
2 13
MDD95-12N1B
VRRM
I FAV
VF
= 2x 1200 V
= 120 A
= 1.13 V
Backside: isolated
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: TO-240AA
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Height: 30 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c

MDD95-12N1B
Rectifier
Symbol
VRSM
VRRM
IR
VF
I FAV
I F(RMS)
VF0
rF
R thJC
R thCH
Ptot
I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1200 V
VR = 1200 V
forward voltage drop
IF = 150 A
IF = 300 A
IF = 150 A
IF = 300 A
average forward current
TC = 100°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDD95-12N1B
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
Ratings
min. typ. max. Unit
1300 V
1200 V
200 µA
15 mA
1.20 V
1.43 V
1.13 V
1.46 V
120 A
180 A
0.75 V
1.95 m
0.26 K/W
0.2 K/W
481 W
2.80 kA
3.03 kA
2.38 kA
2.57 kA
39.2 kA²s
38.1 kA²s
28.3 kA²s
27.5 kA²s
116 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c




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