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MDS9651
Complementary N-P Channel Trench MOSFET
Description
MDS9651– Complementary N-P Channel Trench
MOSFET
MDS9651 Complementary N-P Channel Trench
MOSFET
General Description The MDS9651 uses advanced MagnaChip’s
MOSFET
Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V ...
MagnaChip
Download MDS9651 Datasheet
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