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ME2306-G

Matsuki
Part Number ME2306-G
Manufacturer Matsuki
Title N-Channel Enhancement Mode Mosfet
Description The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high dens...
Features
● RDS(ON)≦37mΩ@VGS=10V
● RDS(ON)≦49mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability PIN CONFIGURATION (SOT-23) Top View PIN DESCRIPTION Pin Symbol 1G 2S 3D Description Gate Source Drain e Ordering Information: M...

Published Mar 20, 2018
Datasheet PDF File ME2306-G PDF File

ME2306-G
ME2306-G


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