DatasheetsPDF.com

ME3587-G

Part Number ME3587-G
Manufacturer Matsuki
Title N- & P-Channel 20V (D-S) MOSFET
Description The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench techno...
Features
● RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
● RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
● RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
● RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
● RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)
● RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC ...

File Size 1.21MB
Datasheet ME3587-G PDF File







Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)