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ME4856-G

Matsuki
Part Number ME4856-G
Manufacturer Matsuki
Description N-Channel 30-V(D-S) MOSFET
Published Feb 9, 2015
Detailed Description N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect tra...
Datasheet PDF File ME4856-G PDF File

ME4856-G
ME4856-G

Overview
N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View ME4856/ME4856-G FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.
5mΩ@VGS=4.
5V ● Super high density cell design for extre...


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