Part Number | MGF0952P |
Manufacturer | Mitsubishi Electric |
Title | L & S BAND GaAs FET |
Description | The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=... |
Features |
• High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm • High power gain Glp=13.5dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=1... |
Published | Feb 4, 2007 |
Datasheet | MGF0952P PDF File |