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MGF1601B-01

Mitsubishi
Part Number MGF1601B-01
Manufacturer Mitsubishi
Title High-power GaAs FET
Description The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to ...
Features  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION  S to X Band medium-powe...
Published Sep 5, 2016
Datasheet PDF File MGF1601B-01 PDF File


MGF1601B-01
MGF1601B-01


Features

 High linear power gain Glp=8.0dB @f=8GHz
 High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION
 S to X Band medium-power amplifiers and oscillators QUALITY
 GG RECOMMENDED BIAS CONDITION
 VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum...



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