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MGF4953B

Mitsubishi Electric
Part Number MGF4953B
Manufacturer Mitsubishi Electric
Description SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package
Published Dec 15, 2006
Detailed Description www.DataSheet4U.com Nｏｖ./2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Cerami...
Datasheet PDF File MGF4953B PDF File

MGF4953B
MGF4953B

Overview
www.
DataSheet4U.
com Nｏｖ.
/2006 MITSUBISHI SEMICONDUTOR MGF4953B SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin.
= 0.
55dB (Typ.
) High associated gain @ f=20GHz Gs = 10.
5dB (Typ.
) Fig.
1 MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric APPLICATION C to K band low noise amplifiers QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 300...


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