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MGFC41V5964

Part Number	MGFC41V5964
Manufacturer	Mitsubishi
Description	C band internally matched power GaAs FET
Published	Apr 29, 2005
Detailed Description	< C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W DESCRIPTION The MGFC41V5964 is an inte...
Datasheet	MGFC41V5964 PDF File

Overview

...rnally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.
) @f=5.
9 – 6.
4GHz  High power gain GLP=9.
5dB (TYP.
) @f=5.
9 – 6.
4GHz  High power added efficiency P.
A.
E.
=33% (TYP.
) @f=5.
9 – 6.
4GHz  Low distortion [ item -51] IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L.
APPLICATION  item 01 : 5.
9 – 6.
4 GHz band power amplifier QUALITY  IG OUTLINE DRAWING Unit: millimeters (inches) R1.
25 24+ /-0.
3 (1) 0.
6+/-0.
15 2MIN R1.
2 (2) 17.
4+/-0.
3 8.
0+/-0.
2 2MIN (3) 20.
4+/-0.
2 13.
4 0.
1 2.
4+/-0...

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