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MGY40N60

Part Number	MGY40N60
Manufacturer	Motorola
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60/D Insulated Gate Bipolar Transistor ...
Datasheet	MGY40N60 PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives.
Fast switching characteristics result in efficient operations at high frequencies.
• • • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 60 mJ per Amp typical at 125°C High Short Circuit Capability – 10 ms minim...

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