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MHE1003N

Part Number	MHE1003N
Manufacturer	Freescale Semiconductor
Description	RF Power LDMOS Transistor
Published	Oct 18, 2018
Detailed Description	Freescale Semiconductor Technical Data Document Number: MHE1003N Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel E...
Datasheet	MHE1003N PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MHE1003N Rev.
0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
Typical Performance: VDD = 26 Vdc, IDQ = 50 mA Frequency (MHz) Signal Type Gps (dB) PAE (%) Pout (W) 2400 CW 14.
0 61.
5 230 2450 13.
9 62.
0 224 2500 11.
5 61.
8 214 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 10:1 at all Phase Angles Pin (W) 20 (3 dB Overdrive) Test Voltage Result 28 No Device Degradation Features  Characterized with series equivalent l...

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