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MHL19338N AMplifier Datasheet PDFPCS Band RF Linear LDMOS AMplifier PCS Band RF Linear LDMOS AMplifier |
| Part Number | MHL19338N |
|---|---|
| Description | PCS Band RF Linear LDMOS AMplifier |
| Feature | www. DataSheet4U. com Freescale Semicondu ctor Technical Data Document Number: M HL19338N Rev. 6, 8/2006 PCS Band RF Li near LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 o hm systems operating in the PCS frequen cy band. A silicon FET Class A design p rovides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics ar e ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VS WR v 1. 5:1 Features • Excellent Phase Linearity and Group D . |
| Manufacture | Motorola Semiconductor |
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| Part Number | MHL19338N |
|---|---|
| Description | PCS Band RF Linear LDMOS AMplifier |
| Feature | www. DataSheet4U. com Freescale Semicondu ctor Technical Data Document Number: M HL19338N Rev. 6, 8/2006 PCS Band RF Li near LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 o hm systems operating in the PCS frequen cy band. A silicon FET Class A design p rovides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics ar e ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VS WR v 1. 5:1 Features • Excellent Phase Linearity and Group D . |
| Manufacture | Motorola Semiconductor |
| Datasheet |
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