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MHL19338N Datasheet

PCS Band RF Linear LDMOS AMplifier

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group del.


Motorola Semiconductor
MHL19338N.pdf

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Motorola Semiconductor MHL19338N Datasheet

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHL19338N 1900 - 2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg T.






www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group del.


Motorola Semiconductor
MHL19338N.pdf

Preview
Preview


Preview

Motorola Semiconductor MHL19338N Datasheet

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 6, 8/2006 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 46 dBm Typ • Power Gain: 30 dB Typ (@ f = 1960 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHL19338N 1900 - 2000 MHz 4.0 W, 30 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg T.








 

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