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MJD18002D2

Part Number	MJD18002D2
Manufacturer	ON Semiconductor
Description	POWER TRANSISTOR 2 AMPERES
Published	Apr 9, 2007
Detailed Description	www.DataSheet4U.com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrate...
Datasheet	MJD18002D2 PDF File

Overview

www.
DataSheet4U.
com MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no longer a need to guarantee an hFE window.
Features http://onsemi.
com POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due ...

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