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MJD32CA

nexperia

3A PNP high power bipolar transistor


Description
MJD32CA 100 V, 3 A PNP high power bipolar transistor 23 November 2020 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less...



nexperia

MJD32CA

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