POWER TRANSISTOR. MJE13007 Datasheet

MJE13007 Datasheet PDF


Part Number

MJE13007

Description

POWER TRANSISTOR

Manufacture

Motorola

Total Page 10 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13007/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
MAXIMUM RATINGS
Rating
Symbol MJE13007 MJF13007 Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
VISOL
400
700
9.0
8.0
16
4.0
8.0
12
24
— 4500
— 3500
— 1500
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 80
40* Watts
0.64 0.32 W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°3.12°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
TL
260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8lbs.
CASE 221A–06
TO–220AB
MJE13007
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

MJE13007
MJE13007 MJF13007
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
400
— Vdc
ICES
IEBO
mAdc
— — 0.1
— — 1.0
— — 100 µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
See Figure 7
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Collector to Heatsink Capacitance, MJF13007
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
hFE —
8.0 — 40
5.0 — 30
VCE(sat)
Vdc
— 1.0
— 2.0
— 3.0
— 3.0
VBE(sat)
Vdc
— 1.2
— 1.6
— 1.5
fT
Cob
Cc–hs
4.0 14 — MHz
— 80 — pF
— 3.0 — pF
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25 µs,
Duty Cycle 1.0%)
Inductive Load, Clamped (Table 1)
td
0.025
0.1
µs
tr — 0.5 1.5
ts — 1.8 3.0
tf — 0.23 0.7
Voltage Storage Time
Crossover Time
Fall Time
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200 µH
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tsv
tc
tfi
— 1.2 2.0 µs
— 1.6 3.0
— 0.15 0.30 µs
— 0.21 0.50
— 0.04 0.12 µs
— 0.10 0.20
2 Motorola Bipolar Power Transistor Device Data





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