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MJL21196

ON
Part Number MJL21196
Manufacturer ON
Description Silicon Power Transistors
Published May 7, 2005
Detailed Description MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technolog...
Datasheet PDF File MJL21196 PDF File

MJL21196
MJL21196

Overview
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • Epoxy Meets UL 94, V−0 @ 0.
125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.
5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC =...


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