MRA1417-11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-11 is a Common
Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz.
FEATURES INCLUDE:
Gold Metallization Emitter Ballasting Input Matching
MAXIMUM RATINGS
IC 4.0 A
VCBO
50 V
PDISS
12 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC...
