MRF1K50H Datasheet





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MRF1K50H Datasheet - RF Power LDMOS Transistor

MRF1K50H   MRF1K50H  

Datasheet: MRF1K50H datasheet

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Description: Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedne ss N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industri al, scientific and medical applications , as well as radio and VHF TV broadcast , sub--GHz aerospace and mobile radio a pplications. Its unmatched input and ou tput design allows for wide frequency r ange use from 1.8 to 500 MHz. Typical P erformance: VDD = 50 Vdc Frequency (MH z) Signal Type Pout (W) Gps (dB) D (%) 27 CW 81.36 (1) CW 87.5–10 8 (2,3) CW 230 (4) Pulse (100 sec , 20% Duty Cycle) Load Mismatch/Rugged ness 1550 CW 1400 CW 1475 CW 1500 Peak 25.9 23.0 23.3 23.7 78.3 75.0 83.4 74.0


Manufacture Part Number Description

NXP

MRF1K50H

RF Power LDMOS Transistor

Freescale Semiconductor

MRF1K50H

RF Power LDMOS Transistor




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