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MRF6S20010GNR1

Freescale Semiconductor

RF Power Field Effect Transistors


Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier ...



Freescale Semiconductor

MRF6S20010GNR1

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