Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvnge...
