www.DataSheet.co.kr
Freescale Semiconductor Technical Data
Document Number: MRFE6VP5600H Rev. 1, 1/2011
RF Power Field Effect Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace an...