MSA0986 Datasheet
Part Number |
MSA0986 |
Manufacturers |
Hewlett-Packard |
Logo |
|
Description |
Cascadable Silicon Bipolar MMIC Amplifier |
Datasheet |
MSA0986 Datasheet (PDF) |
Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0986
Features
• Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 7.2 ± 0.5 dB Typical Gain Flatness from 0.1 to 3.0 GHz • 3 dB Bandwidth: 0.1 to 5.5 GHz • 10.5 dBm Typical P1 dB at 2.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
Description
The MSA-0986 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for very wide bandwidth industrial and commercial applications that require flat gain and low VSWR. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature an.
Cascadable Silicon Bipolar MMIC Amplifier
Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0986
Features
• Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 7.2 ± 0.5 dB Typical Gain Flatness from 0.1 to 3.0 GHz • 3 dB Bandwidth: 0.1 to 5.5 GHz • 10.5 dBm Typical P1 dB at 2.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
Description
The MSA-0986 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for very wide bandwidth industrial and commercial applications that require flat gain and low VSWR. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
86 Plastic Package
Typical Biasing Configuration
R bias VCC > 12 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 7.8 V
2
2
MSA-0986 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65 to +150°C Thermal Resistance[2,4]: θjc = 140°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. .
2006-03-09 : TC9446F M28F211 M28F221 M28F210 M28F220 GMC02xxxx GMC04xxxx GMC10xxxx GMC21xxxx GMC31xxxx