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MSA0986 Datasheet

Part Number MSA0986
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA0986 DatasheetMSA0986 Datasheet (PDF)

  MSA0986   MSA0986
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features • Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 7.2 ± 0.5 dB Typical Gain Flatness from 0.1 to 3.0 GHz • 3 dB Bandwidth: 0.1 to 5.5 GHz • 10.5 dBm Typical P1 dB at 2.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” Description The MSA-0986 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for very wide bandwidth industrial and commercial applications that require flat gain and low VSWR. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature an.






Cascadable Silicon Bipolar MMIC Amplifier

Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features • Broadband, Minimum Ripple Cascadable 50 Ω Gain Block • 7.2 ± 0.5 dB Typical Gain Flatness from 0.1 to 3.0 GHz • 3 dB Bandwidth: 0.1 to 5.5 GHz • 10.5 dBm Typical P1 dB at 2.0 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” Description The MSA-0986 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for very wide bandwidth industrial and commercial applications that require flat gain and low VSWR. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 2 MSA-0986 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65 to +150°C Thermal Resistance[2,4]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. .



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