MSN0212W
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● DC/DC Converter ● Notebook Vcore
Lead Free
PIN Configuration
Marking and pin Assignment
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