MSP0625D
-60V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● High side switch for full brid...