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MTB29N15E MOSFET Datasheet PDFPower MOSFET Power MOSFET |
Part Number | MTB29N15E |
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Description | Power MOSFET |
Feature | MTB29N15E
Preferred Device
Power MOSFET 29 Amps, 150 Volts
N−Channel D2PAK
Th is Power MOSFET is designed to withstan d high energy in the avalanche and comm utation modes. The energy efficient des ign also offers a drain−to−source d iode with a fast recovery time. Designe d for low voltage, high speed switching applications in power supplies, conver ters and PWM motor controls. These devi ces are particularly well suited for br idge circuits where diode speed and com mutating safe operating areas are criti cal and offer additional safety margin against unexpected voltage transients. • Avalanche Energy S . |
Manufacture | ON Semiconductor |
Datasheet |
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Part Number | MTB29N15E |
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Description | TMOS POWER FET |
Feature | MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB29N15E/D
Pro duct Preview
TMOS E-FET. ™ Power Fiel d Effect Transistor N–Channel Enhance ment–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand h igh energy in the avalanche and commuta tion modes. The new energy efficient de sign also offers a drain–to–source diode with a fast recovery time. Design ed for low voltage, high speed switchin g applications in power supplies, conve rters and PWM motor controls, these dev ices are particularly well suited for b ridge circuits where diode speed and co mmutating safe operating a . |
Manufacture | Motorola |
Datasheet |
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