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MTN4N65BI3 MOSFET Datasheet PDFN-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET |
　
　
　
| Part Number | MTN4N65BI3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 990I3 Issued Date : 2016. 05. 26 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTN4N65BI3 B VDSS ID @VGS=10V, TC=25°C ID @VGS=10V , TC=100°C RDS(ON)@VGS=10V, ID=2A 65 0V 4A 2. 4A 2Ω(typ) Features • Low O n Resistance • Simple Drive Requireme nt • Low Gate Charge • Fast Switchi ng Characteristic • Pb-free Lead Plat ing and Halogen-free Package Symbol MT N4N65BI3 Outline TO-251 G：Gate Dï¼ šDrain S：Source G DS Ordering Infor mation Device MTN4N65BI3-0-UA-G Packag e TO-251 (RoHS compliant and halogen-fr ee package) Shipping 80 pcs/tube . |
| Manufacture | CYStech |
| Datasheet |
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| Part Number | MTN4N65BI3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | CYStech Electronics Corp. Spec. No. : C 990I3 Issued Date : 2016. 05. 26 Revised Date : Page No. : 1/10 N-Channel Enhan cement Mode Power MOSFET MTN4N65BI3 B VDSS ID @VGS=10V, TC=25°C ID @VGS=10V , TC=100°C RDS(ON)@VGS=10V, ID=2A 65 0V 4A 2. 4A 2Ω(typ) Features • Low O n Resistance • Simple Drive Requireme nt • Low Gate Charge • Fast Switchi ng Characteristic • Pb-free Lead Plat ing and Halogen-free Package Symbol MT N4N65BI3 Outline TO-251 G：Gate Dï¼ šDrain S：Source G DS Ordering Infor mation Device MTN4N65BI3-0-UA-G Packag e TO-251 (RoHS compliant and halogen-fr ee package) Shipping 80 pcs/tube . |
| Manufacture | CYStech |
| Datasheet |
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