MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP10N40E
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficient...
