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MTV10N100E

Motorola
Part Number MTV10N100E
Manufacturer Motorola
Description TMOS POWER FET 10 AMPERES 1000 VOLTS
Published Oct 23, 2006
Detailed Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET...
Datasheet PDF File MTV10N100E PDF File

MTV10N100E
MTV10N100E

Overview
www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor D 3 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high e...


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