N0600N Datasheet (data sheet) PDF





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N0600N Datasheet - MOS FIELD EFFECT TRANSISTOR

N0600N   N0600N  

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Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS02 20EJ0100 Rev.1.00 Jan 25, 2011 The N06 00N is N-channel MOS Field Effect Trans istor designed for high current switchi ng applications. Features • Low on-s tate resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on) 2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A ) • Low input capacitance ⎯ Ciss = 13

Manufacture Part Number Description

Renesas

N0600N

MOS FIELD EFFECT TRANSISTOR




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