Part Number | NCE01P18K |
Manufacturer | NCE Power Semiconductor |
Title | P-Channel Enhancement Mode Power MOSFET |
Description | The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
Features |
● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) RDS(ON) <120mΩ @ VGS=-10V (Typ:95mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram Application ● Power management in noteb... |
Published | Jun 2, 2018 |
Datasheet | NCE01P18K PDF File |