● VDS =200V,ID =8A RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses Schematic diagram Application
● Power switching application
● Hard switched and high frequ...
NCE0208IA PDF File
