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NCE8010S

NCE Power Semiconductor
Part Number NCE8010S
Manufacturer NCE Power Semiconductor
Title N-Channel Enhancement Mode Power MOSFET
Description The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate c...
Features ● VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ) ● High density cell desig...
Published Jun 2, 2018
Datasheet PDF File NCE8010S PDF File


NCE8010S
NCE8010S


Features

● VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses S...



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