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NDP10N60Z Datasheet

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Vo.

ON Semiconductor
NDP10N60Z.pdf

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ON Semiconductor NDP10N60Z Datasheet
NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V mJ http://onsemi.com VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω Applications N−Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 600 (Note 1) 10 (Note 2) 5.7 (Note 2) 36 (Note 2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 3900 V V TO−220AB CASE 221A STYLE 5 NDF10N60ZG or NDP10N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 10 300 260 V/ns A °C Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package TPKG TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Rat.






NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Vo.

ON Semiconductor
NDP10N60Z.pdf

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ON Semiconductor NDP10N60Z Datasheet
NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V mJ http://onsemi.com VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω Applications N−Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 600 (Note 1) 10 (Note 2) 5.7 (Note 2) 36 (Note 2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 3900 V V TO−220AB CASE 221A STYLE 5 NDF10N60ZG or NDP10N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 10 300 260 V/ns A °C Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package TPKG TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Rat.






N-Channel Power MOSFET

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V mJ http://onsemi.com VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω Applications N−Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 600 (Note 1) 10 (Note 2) 5.7 (Note 2) 36 (Note 2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 3900 V V TO−220AB CASE 221A STYLE 5 NDF10N60ZG or NDP10N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 10 300 260 V/ns A °C Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package TPKG TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Rat.


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