• Push-pull type N-channel GaAs MES FET • VDS = 12.0 V operation • High output power: Pout = 45 W TYP. • High linear gain: GL = 12 dB TYP. • High power added efficiency: ηadd = 45 % TYP.@ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHz
ORDERING I...