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NJ01

INTERFET
Part Number NJ01
Manufacturer INTERFET
Description Silicon Junction Field-Effect Transistor
Published May 11, 2007
Detailed Description F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input...
Datasheet PDF File NJ01 PDF File

NJ01
NJ01

Overview
F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
016" X 0.
016" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ01 Process.
Datasheet 2N4117, 2N4117A 2N4118, 2N4118A 2N4119, 2N4119A IFN421, IFN422 IFN423, IFN424 IFN425, IFN426 Datasheet DPAD1, DPAD2 DPAD5, DPAD10 PAD1, PAD2 PAD5 VCR7N www.
DataSheet4U.
com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Ga...


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