NP23N06YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100 Rev.1.00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) ...
