NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N–Channel te...
