MOSFET – Power, N-Channel
80 V, 1.27 mW
NVCR4LS1D3N08M7A
Features
Typical RDS(on) = 1.0 mW at VGS = 10 V Typical Qg(tot) = 172 nC at VGS = 10 V AEC−Q101 Qualified and PPAP Capable RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passiv...
