Transistor. P1520ED Datasheet

P1520ED Datasheet PDF

Part P1520ED
Description N-Channel Transistor
Feature P1520ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 198mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
Download P1520ED Datasheet

P1520ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1520ED Datasheet




P1520ED
P1520ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
198mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
15
9.3
45
Avalanche Current
IAS 15
Avalanche Energy
L=1.2mH EAS 135
Power Dissipation
TC= 25 °C
TC= 100°C
PD
83
33
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.5
62.5
UNITS
°C / W
REV 1.0
1 2015/10/12



P1520ED
P1520ED
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =200V, VGS = 0V
VDS =160V, VGS = 0V, TJ = 125°C
200
1 1.8 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =7.5A
VGS =10V, ID =7.5A
171 218
168 198
Forward Transconductance1
gfs
VDS =10V, ID =7.5A
17 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS =160V, ID = 15A,
VGS = 10V
VDS = 100V , ID @ 15A,
VGS= 10V, RGEN= 25Ω
871
149
20
30.7
3.1
11.8
29
133
157
111
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dl/dt = 100A / mS
167
0.97
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
15
1
A
V
nS
nC
REV 1.0
2 2015/10/12




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